Introduction of High-NA EUV Lithography Tool
Samsung Electronics is set to make a significant leap in semiconductor manufacturing technology with the introduction of its first high-numerical aperture (high-NA) 0.55 extreme ultraviolet (EUV) lithography tool. The company has announced plans to install the ASML Twinscan EXE:5000 system at its Hwaseong campus between Q4 2024 and Q1 2025. This move marks a crucial step in the development of next-generation process technologies for both logic and DRAM production.
Positioning and Timeline
Samsung’s introduction of the high-NA EUV lithography tool positions it about a year behind Intel but ahead of rivals such as TSMC and SK Hynix in the adoption of this advanced technology. The system is expected to be operational by mid-2025, primarily serving research and development purposes in its initial phase. This timeline underscores Samsung’s commitment to staying competitive in the rapidly evolving semiconductor industry.
Collaborative Efforts and Ecosystem Development
Beyond acquiring the lithography equipment, Samsung is focused on building a comprehensive ecosystem around high-NA EUV technology. The company is collaborating with several key partners, such as Lasertec for inspection equipment of high-NA photomasks, JSR for advanced photoresists, Tokyo Electron for enhanced etching machines, and Synopsys for shifting to curvilinear patterns on photomasks for improved circuit precision.
Prospects and Challenges
The high-NA EUV technology promises significant advancements in chip manufacturing, boasting an 8 nm resolution capability. This could potentially make transistors about 1.7 times smaller and increase transistor density by nearly three times compared to current low-NA EUV systems. However, transitioning to high-NA EUV comes with challenges. The tools are notably more expensive, costing up to $380 million each, and possess a smaller imaging field. Additionally, their larger size necessitates reconsideration of fab layouts.
Despite these hurdles, Samsung aims for the commercial implementation of high-NA EUV technology by 2027, showcasing its determination to lead in semiconductor innovation.
