Introduction to Kioxia’s Innovations
Kioxia Corporation, a world leader in memory solutions, has made a significant stride in semiconductor technology. At the IEEE International Electron Devices Meeting (IEDM) held in San Francisco on December 9, 2024, Kioxia announced the development of a groundbreaking new type of DRAM known as OctRAM (Oxide-Semiconductor Channel Transistor DRAM).
The Potential of OctRAM
This innovative 4F2 DRAM employs an oxide-semiconductor transistor featuring a remarkably high on current while maintaining an ultra-low off current. This unique combination is poised to revolutionize power efficiency in memory solutions. The OctRAM technology, when combined with the ultra-low leakage properties of the InGaZnO transistor, promises to deliver a low-power DRAM option suitable for various applications.
Applications and Collaborations
Jointly developed by Nanya Technology and Kioxia Corporation, OctRAM is expected to lower power consumption in sectors such as AI, post-5G communication systems, and IoT products. The incorporation of a cylinder-shaped InGaZnO vertical transistor enhances the adaptation potential of the 4F2 DRAM design, offering considerable advantages in memory density when compared to traditional silicon-based 6F2 DRAM. This advancement signifies a crucial step toward smarter and more efficient memory solutions that can keep pace with the growing demands of modern technology.
