Revolutionizing Flash Storage
Kioxia America, Inc. has officially commenced mass production of the industry’s first universal flash storage (UFS) version 4.0 embedded flash memory devices using the innovative 4-bit-per-cell, quadruple-level cell (QLC) technology. This leap forward signifies a new era in mobile storage solutions, propelling device capabilities to unprecedented heights.
Why QLC is a Game Changer
The introduction of QLC UFS technology marks a significant advancement over traditional triple-level cell (TLC) options. By offering a higher bit density, this new storage method is perfectly tailored for mobile applications that demand larger storage capacities without compromising on performance. Thanks to advancements in controller technology and robust error correction methodologies, Kioxia’s QLC technology manages to deliver enhanced performance while achieving impressive data density.
Performance Metrics that Impress
Kioxia’s newly minted 512 gigabyte QLC UFS devices deliver extraordinary performance metrics, showcasing sequential read speeds of up to 4,200 megabytes per second (MB/s) and write speeds hitting 3,200 MB/s. These remarkable figures enable developers to fully harness the capabilities of mobile applications, driving forward innovations that were previously constrained by traditional storage limitations.
