Overview of Lam Cryo 3.0
Today, Lam Research Corp. has extended its leadership in 3D NAND flash memory etching with the introduction of Lam Cryo 3.0. This is the third generation of the company’s production-proven cryogenic dielectric etch technology. As the demand for higher capacity and performance memory continues to rise due to the proliferation of generative artificial intelligence (AI), Lam Cryo 3.0 provides critical etch capabilities for the manufacturing of next-generation 3D NAND.
Innovative Technology
Lam Cryo 3.0 leverages ultra-cold temperatures, high power confined plasma reactor technology, and innovations in surface chemistry to achieve industry-leading precision and profile control. Sesha Varadarajan, Senior Vice President of Global Products Group at Lam Research, remarked, “Lam Cryo 3.0 paves the way for customers on the path to 1,000-layer 3D NAND.” With five million wafers already manufactured using Lam’s cryogenic etch, this newest technology signifies a breakthrough in 3D NAND production. It enables the creation of high aspect ratio (HAR) features with angstrom-level precision, lower environmental impact, and more than double the etch rate of conventional dielectric processes.
Focused on Efficiency and Sustainability
Lam Cryo 3.0 tackles the key etch challenges in scaling 3D NAND technology. Utilizing high powered confined plasma reactors, process improvements, and temperatures well below -0°C, the system allows for novel etch chemistries. When combined with scalable, pulsed plasma technology of Lam’s latest VanTex dielectric system, etch depth and profile control are significantly enhanced. Manufacturers can etch memory channels with depths of up to 10 microns and less than 0.1% deviation in critical dimensions from top to bottom. The technology also offers a 40% reduction in energy consumption per wafer and up to 90% reduction in emissions compared to conventional etch processes.
Maximizing Equipment Investment
Lam Cryo 3.0 can be integrated into Lam’s newest VanTex system for optimal profile control and the fastest, deepest dielectric etch. It is also compatible with the company’s portfolio of Flex HAR dielectric etchers, which are used by all major memory manufacturers for 3D NAND mass production. This latest addition further extends Lam’s two-decade leadership in wafer fabrication etch technologies, including seven generations of 3D NAND. Of over 7,500 Lam HAR dielectric etch chambers utilized in NAND production today, nearly 1,000 employ cryogenic etch technology.
