A Revolutionary Leap in Semiconductor Technology
Infineon Technologies AG continues to lead the charge in semiconductor manufacturing technology. Following the announcement of the world’s first 300-millimeter gallium nitride (GaN) power wafer and the opening of the largest 200-millimeter silicon carbide (SiC) power fab in Kulim, Malaysia, the company has now unveiled its latest breakthrough: the thinnest silicon wafers ever produced.
What’s So Special About These Wafers?
With an astonishing thickness of only 20 micrometers, these new silicon wafers are only a quarter the thickness of a human hair! To put this into perspective, they are half as thick as the current standard wafers ranging from 40 to 60 micrometers. This innovative leap demonstrates Infineon’s commitment to delivering extraordinary customer value and pushing the limits of power semiconductor technology.
Impact on Energy Efficiency and Sustainability
Jochen Hanebeck, CEO of Infineon Technologies, stated, “The world’s thinnest silicon wafer is proof of our dedication to deliver outstanding customer value…” This remarkable achievement not only enhances energy efficiency in power solutions but also aligns perfectly with global trends toward decarbonization and digitalization. By mastering all three semiconductor materials—Si, SiC, and GaN—Infineon solidifies its position as an innovation leader in the market.
As the semiconductor industry evolves, make no mistake, these ultra-thin wafers mark a significant milestone that may very well redefine the benchmarks for future technologies and energy-efficient solutions.
