Introduction to High NA EUV Lithography
Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, has unveiled patterned structures obtained after exposure using the 0.55 numerical aperture (NA) EUV scanner. This technology demonstration took place at the joint ASML-imec High NA EUV Lithography Lab in Veldhoven, the Netherlands.
Key Achievements and Results
Among the significant achievements, random logic structures down to 9.5 nm (19 nm pitch), random vias with a 30 nm center-to-center distance, and 2D features at 22 nm pitch were successfully printed using single exposure. Additionally, a DRAM-specific layout at a 32 nm pitch was also realized. These results underscore imec’s capabilities in optimizing materials and baseline processes for High NA EUV lithography under its advanced patterning program.
Patterning Ecosystem Readiness
The recent opening of the joint ASML-imec High NA EUV Lithography Lab has enabled customers to leverage the (Twinscan EXE:5000) High NA EUV scanner. Customers can now develop private High NA EUV use cases tailored to their design rules and layouts. Imec’s success in printing single exposure random logic structures with 9.5 nm dense metal lines (19 nm pitch) reaffirmed the ecosystem’s readiness for High NA EUV lithography.
Implications and Future Prospects
The patterned random vias with a 30 nm center-to-center distance showcased excellent pattern fidelity and critical dimension uniformity. Further, 2D features exhibited outstanding performance, emphasizing High NA EUV’s potential to enable innovative 2D routing. For DRAM, the ability to integrate the storage node landing pad with the bit line periphery in a single exposure is a notable milestone. This suggests that High NA technology could potentially replace several mask layers with one single exposure, streamlining the manufacturing process.
Conclusion
Imec and ASML’s intensive preparatory work positions the 0.55 NA EUV scanner as a critical tool for the next generation of semiconductors. Enhanced by advanced resists, underlayers, and photomasks, as well as baseline processes like optical proximity correction (OPC), integrated patterning, and etch techniques, the groundwork is firmly established for broader adoption of high-resolution High NA EUV lithography.
